National Third Generation Semiconductor Technology Innovation Center (Nanjing) 4 years of independent research and developmentSuccessful tapping of grooved silicon carbideMOSFET chip manufacturing key technologyBreaking the performance "ceiling" of planar silicon carbide MOSFET chips
This is an area in which ourfirst breakthrough
National third-generation semiconductor technology innovation center (Nanjing). Figure source: Jiangning release.
Silicon carbide is a third-generation semiconductor material
representative material
haveWide bandwidth, high critical breakdown electric field,
High electron saturation mobility and
High thermal conductivity, etc.Excellent characteristics of the current industry applications are mainly based on planar silicon carbide MOSFET chips. The design of the trench gate structure than the planar gate structure has obvious performance advantages, can achieve lower conduction loss, better switching performance, higher wafer density, thus greatly reducing the chip cost, but has been limited by the manufacturing process, trench-type silicon carbide MOSFET chip products delayed to come out, application.
"The key is in the process."
National third-generation semiconductor technology innovation center (Nanjing), Huang Runhua, technical director, silicon carbide material hardness is very high, change the plane for the groove, it means that the material to "dig a pit", and can not "dig" to "! Potholes".
During the preparation process, the etching accuracy of the etching process, the etching damage, and the etching surface residue all have a fatal impact on the development and performance of silicon carbide devices.
In the national third-generation semiconductor technology innovation center (Nanjing) platform, researchers in the third generation of semiconductor - silicon carbide chip production line to test products. Source: Nanjing Daily/Zijinshan News reporter Sun Zhongyuan.
In this regard, the national third-generation semiconductor
Technology Innovation Center (Nanjing)
Organize core R&D team and full line fit team
Four years in the making, constantly experimenting with new processes
Finalization of a completely new process
Breaking through the difficulty of "digging a hole", stability, accuracy and other difficulties
Successful fabrication of trench-type silicon carbide MOSFET chips
Improved conduction performance of about 30% compared to planar type
The center is currently working on the product development of trench-type silicon carbide MOSFET chips and launching trench-type silicon carbide power devices.
It is expected to be put into application in new energy vehicle electric drive, smart grid, photovoltaic energy storage and other fields within one year.
What is the impact on people's lives? Huang Runhua to new energy vehicles, for example, silicon carbide power devices itself compared to silicon devices with power saving advantages, can enhance the range of about 5%; application of trench structure, can achieve lower resistance design. In the case of on-state performance indicators remain unchanged, it can achieve a higher density of the chip layout, thereby reducing the cost of chip use.
Market research firm Yole maintains its long-term bullishness on the silicon carbide power device market, which it expects to reach $10 billion by 2029, growing at a CAGR of 25% from 2023-2029.
Produce one generation, develop one generation, pre-research one generation
Currently the country's third-generation semiconductor
Technology Innovation Center (Nanjing)
Research on silicon carbide super-collective devices has been initiated
"The performance of this structure
Better and stronger than the groove type construction
It is also currently being developed."
Huang Runhua revealed
